HM5N60I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM5N60I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO251

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HM5N60I datasheet

 ..1. Size:675K  cn hmsemi
 hm5n60k hm5n60i.pdf pdf_icon

HM5N60I

HM5N60K / HM5N60I HM5N60K / HM5N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 16nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin

 8.1. Size:1319K  cn hmsemi
 hm5n60.pdf pdf_icon

HM5N60I

N R N-CHANNEL MOSFET HM5N60 Package MAIN CHARACTERISTICS .0 A ID 5 600 V VDSS Rdson 2.4 @Vgs=10V 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 8.2. Size:383K  cn hmsemi
 hm5n60 hm5n60f.pdf pdf_icon

HM5N60I

HM5N60 / HM5N60F HM5N60 / HM5N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 16nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching

 9.1. Size:443K  cn hmsemi
 hm5n65 hm5n65f.pdf pdf_icon

HM5N60I

/ / 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switchi

MOSTRAR MÁS

Otros transistores... HM5N20R, HM5N30K, HM5N30PR, HM5N30R, HM5N50I, HM5N50K, HM5N60, HM5N60F, IRF1407, HM5N60K, HM5N65, HM5N65F, HM5N65I, HM5N65K, HM5N90, HM5P55R, HM6005A