HM5N65F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM5N65F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO220F

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HM5N65F datasheet

 ..1. Size:443K  cn hmsemi
 hm5n65 hm5n65f.pdf pdf_icon

HM5N65F

/ / 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switchi

 8.1. Size:885K  cn hmsemi
 hm5n65k hm5n65i.pdf pdf_icon

HM5N65F

HM5N65K/HM5N65I HM5N65K / HM5N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switchi

 9.1. Size:675K  cn hmsemi
 hm5n60k hm5n60i.pdf pdf_icon

HM5N65F

HM5N60K / HM5N60I HM5N60K / HM5N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 16nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin

 9.2. Size:1319K  cn hmsemi
 hm5n60.pdf pdf_icon

HM5N65F

N R N-CHANNEL MOSFET HM5N60 Package MAIN CHARACTERISTICS .0 A ID 5 600 V VDSS Rdson 2.4 @Vgs=10V 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

MOSTRAR MÁS

Otros transistores... HM5N30R, HM5N50I, HM5N50K, HM5N60, HM5N60F, HM5N60I, HM5N60K, HM5N65, TK10A60D, HM5N65I, HM5N65K, HM5N90, HM5P55R, HM6005A, HM603AK, HM603BK, HM603K