HM60N08 Todos los transistores

 

HM60N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM60N08
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 110 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 60 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
   Carga de la puerta (Qg): 55 nC
   Tiempo de subida (tr): 9 nS
   Conductancia de drenaje-sustrato (Cd): 337 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0105 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET HM60N08

 

HM60N08 Datasheet (PDF)

 ..1. Size:892K  cn hmsemi
hm60n08.pdf

HM60N08 HM60N08

HM60N08N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)

 8.1. Size:622K  cn hmsemi
hm60n06k.pdf

HM60N08 HM60N08

HM60N06KDescription The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

 8.2. Size:575K  cn hmsemi
hm60n02.pdf

HM60N08 HM60N08

HM60N02Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)

 8.3. Size:634K  cn hmsemi
hm60n04.pdf

HM60N08 HM60N08

HM60N04N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 8.4. Size:1263K  cn hmsemi
hm60n05k.pdf

HM60N08 HM60N08

HM60N05KN-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)

 8.5. Size:1063K  cn hmsemi
hm60n05.pdf

HM60N08 HM60N08

HM60N05N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)

 8.6. Size:504K  cn hmsemi
hm60n06.pdf

HM60N08 HM60N08

HM60N06Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

 8.7. Size:564K  cn hmsemi
hm60n03d.pdf

HM60N08 HM60N08

HM60N03DN-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)

 8.8. Size:677K  cn hmsemi
hm60n03.pdf

HM60N08 HM60N08

HM60N03N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)

 8.9. Size:646K  cn hmsemi
hm60n04k.pdf

HM60N08 HM60N08

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 8.10. Size:729K  cn hmsemi
hm60n03k.pdf

HM60N08 HM60N08

HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON)

 8.11. Size:492K  cn hmsemi
hm60n02k.pdf

HM60N08 HM60N08

HM60N02KDescription The HM60N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SRC65R600EC | CS7N60CU | HCU70R360

 

 
Back to Top

 


History: SRC65R600EC | CS7N60CU | HCU70R360

HM60N08
  HM60N08
  HM60N08
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top