HM60N75K
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM60N75K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 75
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 60
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11.8
nS
Cossⓘ - Capacitancia
de salida: 340
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085
Ohm
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de MOSFET HM60N75K
HM60N75K
Datasheet (PDF)
..1. Size:598K cn hmsemi
hm60n75k.pdf 
HM60N75K Product Summary General Description The HM60N75K uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate RDS(ON) typ. 6.8 m charge. It can be used in a wide variety of applications. max. 8.5 m ID 60 A Features VDS=75V ID=60A@ VGS=10V 100% UIS TESTED! RDS(ON)
9.1. Size:561K cn hmsemi
hm60n20.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
9.2. Size:892K cn hmsemi
hm60n08.pdf
HM60N08 N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)
9.3. Size:622K cn hmsemi
hm60n06k.pdf
HM60N06K Description The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)
9.4. Size:575K cn hmsemi
hm60n02.pdf
HM60N02 Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)
9.5. Size:634K cn hmsemi
hm60n04.pdf
HM60N04 N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)
9.6. Size:1263K cn hmsemi
hm60n05k.pdf
HM60N05K N-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
9.7. Size:563K cn hmsemi
hm60n10d.pdf
HM60N10D Description The HM60N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 100V,ID =60A RDS(ON)
9.8. Size:740K cn hmsemi
hm60n20d.pdf
HM60N20D N-Channel Enhancement Mode Power MOSFET Description The HM60N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
9.9. Size:1063K cn hmsemi
hm60n05.pdf
HM60N05 N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
9.10. Size:504K cn hmsemi
hm60n06.pdf
HM60N06 Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)
9.11. Size:564K cn hmsemi
hm60n03d.pdf
HM60N03D N-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)
9.12. Size:677K cn hmsemi
hm60n03.pdf
HM60N03 N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)
9.13. Size:646K cn hmsemi
hm60n04k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)
9.14. Size:729K cn hmsemi
hm60n03k.pdf
HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON)
9.15. Size:492K cn hmsemi
hm60n02k.pdf
HM60N02K Description The HM60N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)
Otros transistores... HM60N05
, HM60N05K
, HM60N06
, HM60N06K
, HM60N08
, HM60N10D
, HM60N20
, HM60N20D
, EMB04N03H
, HM610AK
, HM640
, HM6400
, HM6401
, HM6408
, HM6409
, HM6602
, HM6604
.
