HM60N75K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM60N75K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 140 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 100 nC
Tiempo de subida (tr): 11.8 nS
Conductancia de drenaje-sustrato (Cd): 340 pF
Resistencia entre drenaje y fuente RDS(on): 0.0085 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET HM60N75K
HM60N75K Datasheet (PDF)
hm60n75k.pdf
HM60N75K Product Summary General Description The HM60N75K uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate RDS(ON) typ. 6.8 m charge. It can be used in a wide variety of applications. max. 8.5 m ID 60 A Features VDS=75VID=60A@ VGS=10V 100% UIS TESTED! RDS(ON)
hm60n20.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
hm60n08.pdf
HM60N08N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)
hm60n06k.pdf
HM60N06KDescription The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)
hm60n02.pdf
HM60N02Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)
hm60n04.pdf
HM60N04N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)
hm60n05k.pdf
HM60N05KN-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
hm60n10d.pdf
HM60N10DDescription The HM60N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 100V,ID =60A RDS(ON)
hm60n20d.pdf
HM60N20DN-Channel Enhancement Mode Power MOSFET Description The HM60N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
hm60n05.pdf
HM60N05N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
hm60n06.pdf
HM60N06Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)
hm60n03d.pdf
HM60N03DN-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)
hm60n03.pdf
HM60N03N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)
hm60n04k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)
hm60n03k.pdf
HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON)
hm60n02k.pdf
HM60N02KDescription The HM60N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: KIA50N06B-220
