HM640 Datasheet. Equivalente

 ..1. Size:930K  cn hmsemi
 hm640.pdf

HM640 General Description VDSS 200 V HM640, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25 ) 156 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system

 0.1. Size:45K  chenmko
 chm640ngp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM640NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.0

 0.2. Size:1006K  cn hmsemi
 hm6409.pdf

HM6409 P-Channel Enhancement Mode Power MOSFET Description D The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -20V,ID = -5.0A RDS(ON)

 0.3. Size:1121K  cn hmsemi
 hm6408.pdf

HM6408 N-Channel Enhancement Mode Power MOSFET Description D The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 5.5A RDS(ON)

 0.4. Size:734K  cn hmsemi
 hm6400.pdf

HM6400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 6.9A Schematic diagram RDS(ON)

 0.5. Size:759K  cn hmsemi
 hm6401.pdf

HM6401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.0A RDS(ON)