STS2305 Datasheet. Equivalente

 ..1. Size:105K  samhop
 sts2305.pdf

Green Product STS2305 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 57 @ VGS=-4.5V Suface Mount Package. 78 @ VGS=-4.0V 83 @ VGS=-3.7V -20V -3.4A 93 @ VGS=-3.1V 115 @ VGS=-2.5V D SOT-23 D G S G S ABSOL

 0.1. Size:168K  samhop
 sts2305a.pdf

Green Product STS2305A a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 70 @ VGS=-4.5V Suface Mount Package. -20V -3.3A 100 @ VGS=-2.5V D S OT23-3L D G S G S (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RA

 0.2. Size:869K  cn vbsemi
 sts2305a.pdf

STS2305A www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION

 8.1. Size:136K  samhop
 sts2306e.pdf

Green Product S TS 2306E S amHop Microelectronics C orp. J an. 10 2008 Ver1.0 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 30 @ VG S = 4.5V 20V 6.5A S urface Mount Package. 40 @ VG S = 2.5V E S D Protected. D S OT-23 G S ABS OLUTE MAX

 8.2. Size:134K  samhop
 sts2307.pdf

Green Product S TS 2307 S amHop Microelectronics C orp. J UL.30 2004 v1.1 P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 80 @ VG S = -4.5V -20V -3A S OT-23 package. 100 @ VG S = -2.5V D S OT-23 G S AB S OLUTE MAXIMUM R ATINGS (TA=25 C u

 8.3. Size:139K  samhop
 sts2306a.pdf

Green Product S TS 2306A S amHop Microelectronics C orp. Apr. 27 2010 Ver1.1 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 40 @ VG S = 4.5V 20V 4.5A S urface Mount Package. 50 @ VG S = 2.5V E S D Protected. D SOT-23-3L G S ABS OLUTE MA

 8.4. Size:101K  samhop
 sts2301a.pdf

Green Product STS2301A a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 95 @ VGS=-4.5V Suface Mount Package. -20V -2.6A 130 @ VGS=-2.5V D S OT23-3L D G S G S (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RAT

 8.5. Size:133K  samhop
 sts2309a.pdf

Green Product S TS 2309A S amHop Microelectronics C orp. Dec 22 2004 P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 130 @ VG S = -4.5V -20V -2.3A S OT-23 package. 190@ VG S = -2.5V D S OT-23 G S AB S OLUTE MAXIMUM R ATINGS (TA=25 C unle

 8.6. Size:134K  samhop
 sts2301.pdf

Green Product S TS 2301 S amHop Microelectronics C orp. J UL.30 2004 ver1.1 P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 60 @ VG S = -4.5V -20V -3.4A 80 @ VG S = -2.5V S OT-23 package. 105 @ VG S = -1.8V D S OT-23 G S AB S OLUTE MAXI

 8.7. Size:103K  samhop
 sts2302a.pdf

Green Product STS2302A a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 44 @ VGS= 4.5V Suface Mount Package. 20V 4A 65 @ VGS= 2.5V D S OT23-3L D G S G S (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS

 8.8. Size:133K  samhop
 sts2308a.pdf

Green Product S TS 2308A S amHop Microelectronics C orp. Dec 27 2004 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 80 @ VG S = 4.5V 20V 2.7A S OT-23 package. 110 @ VG S = 2.5V D S OT-23 G S AB S OLUTE MAXIMUM R ATING (TA=25 C unless ot

 8.9. Size:127K  samhop
 sts2300s.pdf

S TS 2300S S amHop Microelectronics C orp. S ep. 8 2005 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 35 @ VG S = 4.5V 6A 20V 45 @ VG S = 2.5V S OT-23 package. D S OT-23 G S AB S OLUTE MAXIMUM R ATING (TA=25 C unless otherwise noted) L

 8.10. Size:134K  samhop
 sts2306.pdf

Green Product S TS 2306 S amHop Microelectronics C orp. Apr,21 2005 ver1.2 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 45 @ VG S = 4.5V 20V 2.8A S OT-23 package. 60 @ VG S =2.5V D S OT-23 G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless o

 8.11. Size:879K  cn vbsemi
 sts2306.pdf

STS2306 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C