HM7000 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM7000
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.625 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Corriente continua de drenaje |Id|: 0.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Conductancia de drenaje-sustrato (Cd): 25 pF
Resistencia entre drenaje y fuente RDS(on): 5 Ohm
Paquete / Cubierta: TO92
Búsqueda de reemplazo de MOSFET HM7000
HM7000 Datasheet (PDF)
hm7000.pdf
TO-92 Plastic-Encapsulate MOSFETS 7000 MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX TO-92 5@10V60V200mA1. SOURCE 6@4.5V2. GATE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch Rugged and reliable High saturation current capability
hm7002sr.pdf
HM7002SRSmall Signal MOSFET30 V, 154 mA, Single, N-Channel, GateESD Protection, SC-89Features Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate We declare that the material of product is ROHS compliant and halogen free. ESD Protected:2000VESD Protected:1500VSC-89 S- Prefix for Automotive and Other Applications Requirin
hm7002jr.pdf
HM7002JRSmall Signal MOSFET115 mAmps, 60 VoltsNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking Shipping HM7002JR 72 8000 Tape & ReelN - ChannelMAXIMUM RATINGS3Rating Sy
hm7002kdw.pdf
HM7002KDWHM7002KDWSmall Signal MOSFET380 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT-363 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND
hm7002dw.pdf
HM7002DWHM7002DWSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT-363 qualified and PPAP capable.ESD Protected:1000V2. DEVICE MARKIN
hm7002b.pdf
HM7002BN-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, R DS(ON) = 7.5(MAX) @V GS = 10V. Id = 0. A RDS(ON) = 7.5(MAX) @V GS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. 1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Computer or DC/DC Convert
hm7002.pdf
HM7002N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES VDS = 60V,ID = 0.5A RDS(ON)
hm7002kr.pdf
HM7002KRHM7002KRSmall Signal MOSFET115 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD Protected:1000V2. DEVICE MA
hm7002dm.pdf
Small Signal MOSFET 115 mAmps, 60 Volts NChannel S We declare that the material of product compliance with RoHS requirements. ESD Protected:1000V S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S MAXIMUM RATINGSRating Symbol Value Unit115 mAMPS
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
