HM7002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM7002
   Código: 7002
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 1.7 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET HM7002

HM7002 Datasheet (PDF)

..1. Size:380K cn hmsemi
hm7002.pdf

HM7002N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES VDS = 60V,ID = 0.5A RDS(ON)

0.1. Size:691K cn hmsemi
hm7002sr.pdf

HM7002SRSmall Signal MOSFET30 V, 154 mA, Single, N-Channel, GateESD Protection, SC-89Features Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate We declare that the material of product is ROHS compliant and halogen free. ESD Protected:2000VESD Protected:1500VSC-89 S- Prefix for Automotive and Other Applications Requirin

0.2. Size:393K cn hmsemi
hm7002jr.pdf

HM7002JRSmall Signal MOSFET115 mAmps, 60 VoltsNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking Shipping HM7002JR 72 8000 Tape & ReelN - ChannelMAXIMUM RATINGS3Rating Sy

0.3. Size:980K cn hmsemi
hm7002kdw.pdf

HM7002KDWHM7002KDWSmall Signal MOSFET380 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT-363 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND

0.4. Size:1196K cn hmsemi
hm7002dw.pdf

HM7002DWHM7002DWSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT-363 qualified and PPAP capable.ESD Protected:1000V2. DEVICE MARKIN

0.5. Size:1287K cn hmsemi
hm7002b.pdf

HM7002BN-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, R DS(ON) = 7.5(MAX) @V GS = 10V. Id = 0. A RDS(ON) = 7.5(MAX) @V GS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. 1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Computer or DC/DC Convert

0.6. Size:560K cn hmsemi
hm7002kr.pdf

HM7002KRHM7002KRSmall Signal MOSFET115 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD Protected:1000V2. DEVICE MA

0.7. Size:321K cn hmsemi
hm7002dm.pdf

Small Signal MOSFET 115 mAmps, 60 Volts NChannel S We declare that the material of product compliance with RoHS requirements. ESD Protected:1000V S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S MAXIMUM RATINGSRating Symbol Value Unit115 mAMPS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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