HM7002KDW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM7002KDW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.4 nS
   Cossⓘ - Capacitancia de salida: 3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: SOT-363

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HM7002KDW Datasheet (PDF)

..1. Size:980K cn hmsemi
hm7002kdw.pdf

HM7002KDWHM7002KDWSmall Signal MOSFET380 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT-363 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND

7.1. Size:560K cn hmsemi
hm7002kr.pdf

HM7002KRHM7002KRSmall Signal MOSFET115 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD Protected:1000V2. DEVICE MA

8.1. Size:691K cn hmsemi
hm7002sr.pdf

HM7002SRSmall Signal MOSFET30 V, 154 mA, Single, N-Channel, GateESD Protection, SC-89Features Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate We declare that the material of product is ROHS compliant and halogen free. ESD Protected:2000VESD Protected:1500VSC-89 S- Prefix for Automotive and Other Applications Requirin

8.2. Size:393K cn hmsemi
hm7002jr.pdf

HM7002JRSmall Signal MOSFET115 mAmps, 60 VoltsNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking Shipping HM7002JR 72 8000 Tape & ReelN - ChannelMAXIMUM RATINGS3Rating Sy

8.3. Size:1196K cn hmsemi
hm7002dw.pdf

HM7002DWHM7002DWSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT-363 qualified and PPAP capable.ESD Protected:1000V2. DEVICE MARKIN

8.4. Size:1287K cn hmsemi
hm7002b.pdf

HM7002BN-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, R DS(ON) = 7.5(MAX) @V GS = 10V. Id = 0. A RDS(ON) = 7.5(MAX) @V GS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. 1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Computer or DC/DC Convert

8.5. Size:380K cn hmsemi
hm7002.pdf

HM7002N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES VDS = 60V,ID = 0.5A RDS(ON)

8.6. Size:321K cn hmsemi
hm7002dm.pdf

Small Signal MOSFET 115 mAmps, 60 Volts NChannel S We declare that the material of product compliance with RoHS requirements. ESD Protected:1000V S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S MAXIMUM RATINGSRating Symbol Value Unit115 mAMPS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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