HM7002SR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM7002SR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.154 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 10 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
Paquete / Cubierta: SC89
Búsqueda de reemplazo de MOSFET HM7002SR
HM7002SR Datasheet (PDF)
hm7002sr.pdf
HM7002SRSmall Signal MOSFET30 V, 154 mA, Single, N-Channel, GateESD Protection, SC-89Features Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate We declare that the material of product is ROHS compliant and halogen free. ESD Protected:2000VESD Protected:1500VSC-89 S- Prefix for Automotive and Other Applications Requirin
hm7002jr.pdf
HM7002JRSmall Signal MOSFET115 mAmps, 60 VoltsNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking Shipping HM7002JR 72 8000 Tape & ReelN - ChannelMAXIMUM RATINGS3Rating Sy
hm7002kdw.pdf
HM7002KDWHM7002KDWSmall Signal MOSFET380 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT-363 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND
hm7002dw.pdf
HM7002DWHM7002DWSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT-363 qualified and PPAP capable.ESD Protected:1000V2. DEVICE MARKIN
hm7002b.pdf
HM7002BN-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, R DS(ON) = 7.5(MAX) @V GS = 10V. Id = 0. A RDS(ON) = 7.5(MAX) @V GS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. 1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Computer or DC/DC Convert
hm7002.pdf
HM7002N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES VDS = 60V,ID = 0.5A RDS(ON)
hm7002kr.pdf
HM7002KRHM7002KRSmall Signal MOSFET115 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD Protected:1000V2. DEVICE MA
hm7002dm.pdf
Small Signal MOSFET 115 mAmps, 60 Volts NChannel S We declare that the material of product compliance with RoHS requirements. ESD Protected:1000V S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S MAXIMUM RATINGSRating Symbol Value Unit115 mAMPS
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
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