HM70N15 Todos los transistores

 

HM70N15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM70N15
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 243 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO220
 

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HM70N15 Datasheet (PDF)

 ..1. Size:518K  cn hmsemi
 hm70n15.pdf pdf_icon

HM70N15

N-Channel Enhancement Mode Power MOSFET Description The HM70N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)

 9.1. Size:583K  cn hmsemi
 hm70n78.pdf pdf_icon

HM70N15

HM70N78N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N78 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeature

 9.2. Size:510K  cn hmsemi
 hm70n75.pdf pdf_icon

HM70N15

HM70N75N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatur

 9.3. Size:397K  cn hmsemi
 hm70n20t.pdf pdf_icon

HM70N15

General Description VDSS 200 V , the silicon N-channel Enhanced ID 70 A PD(TC=25) 367 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 29.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz

MOSTRAR MÁS

Otros transistores... HM7002 , HM7002B , HM7002DM , HM7002DW , HM7002JR , HM7002KDW , HM7002KR , HM7002SR , 2SK3878 , HM70N20T , HM70N75 , HM70N75D , HM70N78 , HM70N80 , HM70N80A , HM70N88 , HM70N90D .

History: NCE70N1K1K | STL90N3LLH6 | AP72T02GH | STU336S

 

 
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