HM70N78 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM70N78
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 846 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET HM70N78

HM70N78 Datasheet (PDF)

..1. Size:583K cn hmsemi
hm70n78.pdf

HM70N78N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N78 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeature

8.1. Size:510K cn hmsemi
hm70n75.pdf

HM70N75N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatur

8.2. Size:652K cn hmsemi
hm70n75d.pdf

HM70N75DN-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75D is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeat

9.1. Size:397K cn hmsemi
hm70n20t.pdf

General Description VDSS 200 V , the silicon N-channel Enhanced ID 70 A PD(TC=25) 367 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 29.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz

9.2. Size:728K cn hmsemi
hm70n80.pdf

68VDS25VGS80A(ID) N-Channel Enhancement Mode MOSFET Features Pin Description VDSS=68VVGSS=25VID=80A RDS(ON)=10.8m(Max.)@VGS=10V Avalanche Rated Reliable and Rugged Advanced trench process technology High Density Cell Design Fo

9.3. Size:421K cn hmsemi
hm70n88.pdf

N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeature

9.4. Size:675K cn hmsemi
hm70n90d.pdf

9.5. Size:575K cn hmsemi
hm70n80a.pdf

HM70N80AN-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N80A is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeat

9.6. Size:518K cn hmsemi
hm70n15.pdf

N-Channel Enhancement Mode Power MOSFET Description The HM70N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)

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