HM70N88 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM70N88
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 145 W
Voltaje máximo drenador - fuente |Vds|: 70 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 88 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 81 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 883 pF
Resistencia entre drenaje y fuente RDS(on): 0.0052 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET HM70N88
HM70N88 Datasheet (PDF)
hm70n88.pdf
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hm70n80.pdf
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hm70n80a.pdf
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hm70n78.pdf
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hm70n75.pdf
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hm70n20t.pdf
General Description VDSS 200 V , the silicon N-channel Enhanced ID 70 A PD(TC=25) 367 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 29.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz
hm70n90d.pdf
N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatu
hm70n75d.pdf
HM70N75DN-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75D is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeat
hm70n15.pdf
N-Channel Enhancement Mode Power MOSFET Description The HM70N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
