HM70P02D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM70P02D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 100 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: DFN5X6-8L

Búsqueda de reemplazo de MOSFET HM70P02D

HM70P02D Datasheet (PDF)

..1. Size:595K cn hmsemi
hm70p02d.pdf

HM70P02DP-Channel Enhancement Mode Power MOSFET Description The HM70P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-70A Schematic diagram RDS(ON)

8.1. Size:1761K cn vbsemi
hm70p04k.pdf

HM70P04Kwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl

8.2. Size:684K cn hmsemi
hm70p04.pdf

HM70P04P-Channel Enhancement Mode Power MOSFET Description The HM70P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

8.3. Size:1139K cn hmsemi
hm70p03k.pdf

HM70P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM70P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -70A D SRDS(ON)

8.4. Size:649K cn hmsemi
hm70p04k.pdf

HM70P04KP-Channel Enhancement Mode Power MOSFET Description The HM70P04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

8.5. Size:1412K cn hmsemi
hm70p03.pdf

HM70P03P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM70P03 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -70A D SRDS(ON)

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