HM70P02D Datasheet. Equivalente

 ..1. Size:595K  cn hmsemi
 hm70p02d.pdf

HM70P02D P-Channel Enhancement Mode Power MOSFET Description The HM70P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-70A Schematic diagram RDS(ON)

 8.1. Size:1761K  cn vbsemi
 hm70p04k.pdf

HM70P04K www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl

 8.2. Size:684K  cn hmsemi
 hm70p04.pdf

HM70P04 P-Channel Enhancement Mode Power MOSFET Description The HM70P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

 8.3. Size:1139K  cn hmsemi
 hm70p03k.pdf

HM70P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM70P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -70A D S RDS(ON)

 8.4. Size:649K  cn hmsemi
 hm70p04k.pdf

HM70P04K P-Channel Enhancement Mode Power MOSFET Description The HM70P04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

 8.5. Size:1412K  cn hmsemi
 hm70p03.pdf

HM70P03 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM70P03 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -70A D S RDS(ON)