FDMC7680 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMC7680
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 30 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
   Paquete / Cubierta: POWER33

Búsqueda de reemplazo de MOSFET FDMC7680

FDMC7680 Datasheet (PDF)

..1. Size:207K fairchild semi
fdmc7680.pdf

March 2010FDMC7680N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m Features General Description Max rDS(on) = 7.2 m at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 9.5 m at VGS = 4.5 V, ID = 12.4 Abeen especially tailored to minimize the on-state resistance. This High p

8.1. Size:283K fairchild semi
fdmc7660dc.pdf

January 2011FDMC7660DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

8.2. Size:272K fairchild semi
fdmc7696.pdf

November 2011FDMC7696N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance.This device

8.3. Size:208K fairchild semi
fdmc7672.pdf

March 2010FDMC7672N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m Features General Description Max rDS(on) = 5.7 m at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 15.0 Abeen especially tailored to minimize the on-state resistance. This High p

8.4. Size:205K fairchild semi
fdmc7664.pdf

June 2010FDMC7664N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.2 m at VGS = 10 V, ID = 18.8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16.1 Abeen especially tailored to minimize the on-state resistance. This de

8.5. Size:371K fairchild semi
fdmc7660s.pdf

December 2009FDMC7660SN-Channel Power Trench SyncFET 30 V, 20 A, 2.2 mFeatures General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m at VGS = 4.5 V, ID = 18 Aand package technologies have been combined to offer the Hi

8.6. Size:343K fairchild semi
fdmc7672s.pdf

September 2010FDMC7672SN-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 mFeatures General DescriptionThis FDMC7672S is produced using Fairchild Semiconductors Max rDS(on) = 6.0 m at VGS = 10 V, ID = 14.8 Aadvanced Power Trench process that has been especially Max rDS(on) = 7.1 m at VGS = 4.5 V, ID = 12.4 Atailored to minimize the on-state resistance. This d

8.7. Size:328K fairchild semi
fdmc7692s.pdf

September 2010FDMC7692SN-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 mFeatures General DescriptionThis FDMC7692S is produced using Fairchild Semiconductors Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 Aadvanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 Atailored to minimize the on-state resistance. This

8.8. Size:330K fairchild semi
fdmc7678.pdf

June 2011FDMC7678N-Channel Power Trench MOSFET 30 V, 19.5 A, 5.3 mFeatures General Description Max rDS(on) = 5.3 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15.0 Abeen especially tailored to minimize the on-state resistance. This High

8.9. Size:250K fairchild semi
fdmc7660.pdf

December 2009FDMC7660N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 Abeen especially tailored to minimize the on-state resistance. This High perfo

8.10. Size:319K fairchild semi
fdmc7692.pdf

September 2010FDMC7692N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 Abeen especially tailored to minimize the on-state resistance. This H

8.11. Size:469K onsemi
fdmc7692.pdf

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