FDMC7692 Datasheet. Equivalente

 ..1. Size:319K  fairchild semi
 fdmc7692.pdf

September 2010 FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 A been especially tailored to minimize the on-state resistance. This H

 ..2. Size:469K  onsemi
 fdmc7692.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 0.1. Size:328K  fairchild semi
 fdmc7692s.pdf

September 2010 FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m Features General Description This FDMC7692S is produced using Fairchild Semiconductor s Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 A advanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 A tailored to minimize the on-state resistance. This

 7.1. Size:272K  fairchild semi
 fdmc7696.pdf

November 2011 FDMC7696 N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance.This device

 8.1. Size:283K  fairchild semi
 fdmc7660dc.pdf

January 2011 FDMC7660DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

 8.2. Size:208K  fairchild semi
 fdmc7672.pdf

March 2010 FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m Features General Description Max rDS(on) = 5.7 m at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 15.0 A been especially tailored to minimize the on-state resistance. This High p

 8.3. Size:205K  fairchild semi
 fdmc7664.pdf

June 2010 FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.2 m at VGS = 10 V, ID = 18.8 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16.1 A been especially tailored to minimize the on-state resistance. This de

 8.4. Size:371K  fairchild semi
 fdmc7660s.pdf

December 2009 FDMC7660S N-Channel Power Trench SyncFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m at VGS = 4.5 V, ID = 18 A and package technologies have been combined to offer the Hi

 8.5. Size:343K  fairchild semi
 fdmc7672s.pdf

September 2010 FDMC7672S N-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 m Features General Description This FDMC7672S is produced using Fairchild Semiconductor s Max rDS(on) = 6.0 m at VGS = 10 V, ID = 14.8 A advanced Power Trench process that has been especially Max rDS(on) = 7.1 m at VGS = 4.5 V, ID = 12.4 A tailored to minimize the on-state resistance. This d

 8.6. Size:330K  fairchild semi
 fdmc7678.pdf

June 2011 FDMC7678 N-Channel Power Trench MOSFET 30 V, 19.5 A, 5.3 m Features General Description Max rDS(on) = 5.3 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15.0 A been especially tailored to minimize the on-state resistance. This High

 8.7. Size:250K  fairchild semi
 fdmc7660.pdf

December 2009 FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 A been especially tailored to minimize the on-state resistance. This High perfo

 8.8. Size:207K  fairchild semi
 fdmc7680.pdf

March 2010 FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m Features General Description Max rDS(on) = 7.2 m at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 9.5 m at VGS = 4.5 V, ID = 12.4 A been especially tailored to minimize the on-state resistance. This High p