HM80N03A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM80N03A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 460 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: TO220

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HM80N03A datasheet

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HM80N03A

HM80N03A N-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.1. Size:602K  cn hmsemi
 hm80n03i.pdf pdf_icon

HM80N03A

HM80N03I N-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.2. Size:583K  cn hmsemi
 hm80n03.pdf pdf_icon

HM80N03A

 7.3. Size:511K  cn hmsemi
 hm80n03k.pdf pdf_icon

HM80N03A

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM7N65, HM7N65F, HM7N65I, HM7N65K, HM7N80, HM7N80D, HM7N80F, HM80N03, IRF1407, HM80N03I, HM80N03K, HM80N03KA, HM80N04, HM80N04K, HM80N05K, HM80N06K, HM80N06KA