HM80N03A Todos los transistores

 

HM80N03A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM80N03A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET HM80N03A

 

Principales características: HM80N03A

 ..1. Size:841K  cn hmsemi
 hm80n03a.pdf pdf_icon

HM80N03A

HM80N03A N-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.1. Size:602K  cn hmsemi
 hm80n03i.pdf pdf_icon

HM80N03A

HM80N03I N-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.2. Size:583K  cn hmsemi
 hm80n03.pdf pdf_icon

HM80N03A

 7.3. Size:511K  cn hmsemi
 hm80n03k.pdf pdf_icon

HM80N03A

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM7N65 , HM7N65F , HM7N65I , HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 , 2SK3568 , HM80N03I , HM80N03K , HM80N03KA , HM80N04 , HM80N04K , HM80N05K , HM80N06K , HM80N06KA .

History: HM7N65K | F16N65 | HM8205

 

 
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