HM80N08K Todos los transistores

 

HM80N08K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM80N08K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 100 nC
   trⓘ - Tiempo de subida: 11.8 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de HM80N08K MOSFET

   - Selección ⓘ de transistores por parámetros

 

HM80N08K Datasheet (PDF)

 ..1. Size:988K  cn hmsemi
 hm80n08k.pdf pdf_icon

HM80N08K

HM80N08K N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N08K uses advanced trench technology and BVDSS typ. 80 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=80VID=

 8.1. Size:602K  cn hmsemi
 hm80n03i.pdf pdf_icon

HM80N08K

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 8.2. Size:517K  cn hmsemi
 hm80n05k.pdf pdf_icon

HM80N08K

HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =50V,ID =80A RDS(ON)

 8.3. Size:583K  cn hmsemi
 hm80n03.pdf pdf_icon

HM80N08K

HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM80N03I , HM80N03K , HM80N03KA , HM80N04 , HM80N04K , HM80N05K , HM80N06K , HM80N06KA , IRFB31N20D , HM80N15 , HM80N70 , HM80N80 , HM80N80B , HM8205 , HM8205A , HM8205D , HM8205Q .

History: IRF4104SPBF

 

 
Back to Top

 


 
.