HM80N15 Datasheet. Equivalente

 ..1. Size:421K  cn hmsemi
 hm80n15.pdf

HM80N15 N-Channel Enhancement Mode Power MOSFET Description The HM80N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)

 9.1. Size:112K  chenmko
 chm80n75ngp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM80N75NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 75 Volts CURRENT 80 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

 9.2. Size:988K  cn hmsemi
 hm80n08k.pdf

HM80N08K N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N08K uses advanced trench technology and BVDSS typ. 80 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=80V ID=

 9.3. Size:602K  cn hmsemi
 hm80n03i.pdf

HM80N03I N-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 9.4. Size:517K  cn hmsemi
 hm80n05k.pdf

HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =50V,ID =80A RDS(ON)

 9.5. Size:583K  cn hmsemi
 hm80n03.pdf

 9.6. Size:542K  cn hmsemi
 hm80n80b.pdf

MOSFET Features 80V,80A N-Channel MOSFET Rdson

 9.7. Size:564K  cn hmsemi
 hm80n06k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)

 9.8. Size:511K  cn hmsemi
 hm80n03k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 9.9. Size:702K  cn hmsemi
 hm80n06ka.pdf

HM80N06KA N-Channel Enhancement Mode Power MOSFET Description The HM80N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)

 9.10. Size:674K  cn hmsemi
 hm80n03ka.pdf

HM80N03KA N-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 9.11. Size:795K  cn hmsemi
 hm80n70.pdf

80VDS 25VGS 66A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=80V VGSS= 25V ID=66A RDS(ON)=12m (Max.)@VGS=10V Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Synchronous

 9.12. Size:713K  cn hmsemi
 hm80n04.pdf

HM80N04 N-Channel Enhancement Mode Power MOSFET Description The HM80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 9.13. Size:841K  cn hmsemi
 hm80n03a.pdf

HM80N03A N-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 9.14. Size:750K  cn hmsemi
 hm80n04k.pdf

HM80N04K N-Channel Enhancement Mode Power MOSFET Description The HM80N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 9.15. Size:602K  cn hmsemi
 hm80n80.pdf

HM80N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS= V ID=80