HM85N80 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM85N80 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 170 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 340 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Encapsulados: TO220
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HM85N80 datasheet
hm85n80.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =85V,ID =80A Schematic diagram RDS(ON)
hm85n95d.pdf
HM85N95D N-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)
hm85n90.pdf
HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON)
hm85n02k.pdf
HM K Description The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)
Otros transistores... HM8205D, HM8205Q, HM830, HM830F, HM840, HM840F, HM85N02, HM85N02K, IRFB31N20D, HM85N90, HM85N95D, HM85P02, HM85P02D, HM85P02K, HM8810A, HM8810S, HM8N20
Parámetros del MOSFET. Cómo se afectan entre sí.
History: APT8024LFLLG | NTZD3155CT2G
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