HM8810A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM8810A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 315 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TSSOP8

  📄📄 Copiar 

 Búsqueda de reemplazo de HM8810A MOSFET

- Selecciónⓘ de transistores por parámetros

 

HM8810A datasheet

 ..1. Size:881K  cn hmsemi
 hm8810a.pdf pdf_icon

HM8810A

HM Dual N-Channel Trench Power MOSFET General Description The HM uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Schematic Diagram Features VDS = 20V,ID =7A HM R

 8.1. Size:1022K  cn vbsemi
 hm8810e.pdf pdf_icon

HM8810A

HM8810E www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2 3 4

 8.2. Size:869K  cn hmsemi
 hm8810s.pdf pdf_icon

HM8810A

HM8810S Dual N-Channel Trench Power MOSFET General Description The HM8810S uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Schematic Diagram Features VDS = 20V,ID =5A HM8810S R

 8.3. Size:673K  cn hmsemi
 hm8810e.pdf pdf_icon

HM8810A

HM8810E Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = 20V,ID =7A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM85N02, HM85N02K, HM85N80, HM85N90, HM85N95D, HM85P02, HM85P02D, HM85P02K, 3401, HM8810S, HM8N20, HM8N20A, HM8N20I, HM8N20K, HM8N20KA, HM8N25K, HM8P02MR