2SK2553 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2553
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1 V
Tiempo de subida (tr): 230 nS
Conductancia de drenaje-sustrato (Cd): 1760 pF
Resistencia entre drenaje y fuente RDS(on): 0.01 Ohm
Paquete / Cubierta: LDPAK
Búsqueda de reemplazo de MOSFET 2SK2553
2SK2553 Datasheet (PDF)
2sk2553.pdf
2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1015-1000 (Previous: ADE-208-357H) Rev.10.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS
rej03g1015 2sk2553lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2551.pdf
2SK2551 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2551 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 7.2 m (typ.) High forward transfer admittance : |Y | = 50 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 1.5~3.0 V
2sk2550.pdf
2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2550 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 24 m (typ.) High forward transfer admittance : |Y | = 27 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (
2sk2556.pdf
No. N 5317A2SK2556No. N5317A70999 No. 5317 N MOS 2SK2556DC / DC 4V Absolute Maximum Ratings / Ta=25 unit
2sk2555.pdf
Ordering number:ENN5316AN-Channel Silicon MOSFET2SK2555DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SK2555]6.52.35.00.540.850.71.20.6 0.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK2555]6.5 2.35.0 0.540.50.85
2sk2554.pdf
2SK2554 Silicon N Channel MOS FET REJ03G1016-0600 (Previous: ADE-208-359D) Rev.6.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 4.5 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(
rej03g1016 2sk2554ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2552.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... 2SK2520-01MR , 2SK2521-01 , 2SK2522-01MR , 2SK2523-01 , 2SK2524-01MR , 2SK2525-01 , 2SK2529 , 2SK2541 , IRF540N , 2SK2554 , 2SK2586 , 2SK2684 , 2SK2701 , 2SK2702 , 2SK2703 , 2SK2704 , 2SK2705 .
History: WMH7N65D1B
