HM9435B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM9435B
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 75 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET HM9435B
Principales características: HM9435B
hm9435b.pdf
HM9435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)
chm9435azgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM9435AZGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. (SO-8 ) 1.65+0.15 * High density cell design for extremely low RDS(ON). 6.50+0.20 0.90+0.05 2.0+0
chm9435gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM9435GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * Small flat package. (SOT-23) * Advanced trench process technology * High Density Cell Design For Ultra Low On-Resistance (1) (
chm9435ajgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM9435AJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and re
Otros transistores... HM8N20K , HM8N20KA , HM8N25K , HM8P02MR , HM90N04D , HM90N06D , HM9435 , HM9435A , IRF540N , HM9436 , HM9926 , HM9926B , HM9N90F , HMS100N85D , HMS105N10D , HMS10N60I , HMS10N60K .
History: AP45P06D | AP2222D | 3N324 | PJX8808 | AP25G03GD
History: AP45P06D | AP2222D | 3N324 | PJX8808 | AP25G03GD
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