HM9435B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM9435B
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 3.3 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET HM9435B

HM9435B Datasheet (PDF)

..1. Size:676K cn hmsemi
hm9435b.pdf

HM9435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)

8.1. Size:110K chenmko
chm9435azgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM9435AZGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. (SO-8 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.052.0+0

8.2. Size:338K chenmko
chm9435gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM9435GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small flat package. (SOT-23)* Advanced trench process technology * High Density Cell Design For Ultra Low On-Resistance (1)(

8.3. Size:103K chenmko
chm9435ajgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM9435AJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and re

8.4. Size:435K cn hmsemi
hm9435.pdf

HM9435P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM9435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

8.5. Size:572K cn hmsemi
hm9435a.pdf

HM9435AP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM9435A uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

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History: STB14NK50Z | FDPF5N50NZU

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