HM9436 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM9436
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET HM9436

HM9436 Datasheet (PDF)

..1. Size:862K cn hmsemi
hm9436.pdf

P-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -7A RDS(ON)

0.1. Size:102K chenmko
chm9436ajgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM9436AJGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and re

9.1. Size:110K chenmko
chm9435azgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM9435AZGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. (SO-8 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.052.0+0

9.2. Size:338K chenmko
chm9435gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM9435GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small flat package. (SOT-23)* Advanced trench process technology * High Density Cell Design For Ultra Low On-Resistance (1)(

9.3. Size:91K chenmko
chm9433jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM9433JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

9.4. Size:103K chenmko
chm9435ajgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM9435AJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and re

9.5. Size:435K cn hmsemi
hm9435.pdf

HM9435P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM9435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

9.6. Size:572K cn hmsemi
hm9435a.pdf

HM9435AP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM9435A uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

9.7. Size:676K cn hmsemi
hm9435b.pdf

HM9435B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)

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