HM9926 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM9926  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOP-8

  📄📄 Copiar 

 Búsqueda de reemplazo de HM9926 MOSFET

- Selecciónⓘ de transistores por parámetros

 

HM9926 datasheet

 ..1. Size:494K  cn hmsemi
 hm9926.pdf pdf_icon

HM9926

HM9926 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =20V,ID =6A Schematic diagram RDS(ON)

 0.1. Size:94K  chenmko
 chm9926jgp.pdf pdf_icon

HM9926

CHENMKO ENTERPRISE CO.,LTD CHM9926JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and

 0.2. Size:93K  chenmko
 chm9926pagp.pdf pdf_icon

HM9926

CHENMKO ENTERPRISE CO.,LTD CHM9926PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 26 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

 0.3. Size:94K  chenmko
 chm9926ajgp.pdf pdf_icon

HM9926

CHENMKO ENTERPRISE CO.,LTD CHM9926AJGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and

MOSTRAR MÁS

Otros transistores... HM8N25K, HM8P02MR, HM90N04D, HM90N06D, HM9435, HM9435A, HM9435B, HM9436, IRF540N, HM9926B, HM9N90F, HMS100N85D, HMS105N10D, HMS10N60I, HMS10N60K, HMS110N15, HMS11N60