HMS10N60K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HMS10N60K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 35 nC
Tiempo de subida (tr): 55 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia entre drenaje y fuente RDS(on): 0.46 Ohm
Paquete / Cubierta: IPAK
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HMS10N60K Datasheet (PDF)
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HMS10N60K/HMS10N60IHMS10N60K/HMS10N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 10A, 600V, RDS(on) typ. = 0.42@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 35nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast
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