HMS11N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HMS11N65F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 87 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: TO220F

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HMS11N65F Datasheet (PDF)

..1. Size:703K cn hmsemi
hms11n65 hms11n65d hms11n65f.pdf

HMS11N65/ HMS11N65F/HMS11N65DGeneral Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features New technology

6.1. Size:683K cn hmsemi
hms11n65k hms11n65i.pdf

HMS11N65K/HMS11N65IHMS11N65K/HMS11N65I650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 650V, RDS(on) typ. = 0.38@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast

6.2. Size:876K cn hmsemi
hms11n65i hms11n65k.pdf

HMS11N65I / HMS11N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

7.1. Size:737K cn hmsemi
hms11n60d hms11n60 hms11n60f.pdf

HMS11N60D,HMS11N60,HMS11N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p

7.2. Size:682K cn hmsemi
hms11n60k hms11n60i.pdf

HMS11N60K/HMS11N60IHMS11N60K/HMS11N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 600V, RDS(on) typ. = 0.34@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SDF10N100SXH

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