HMS11N65I Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HMS11N65I  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 101 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 54 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: TO251

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HMS11N65I datasheet

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HMS11N65I

HMS11N65K/HMS11N65I HMS11N65K/HMS11N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 650V, RDS(on) typ. = 0.38 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

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HMS11N65I

HMS11N65I / HMS11N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 6.1. Size:703K  cn hmsemi
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HMS11N65I

HMS11N65/ HMS11N65F/HMS11N65D General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features New technology

 7.1. Size:737K  cn hmsemi
 hms11n60d hms11n60 hms11n60f.pdf pdf_icon

HMS11N65I

HMS11N60D,HMS11N60,HMS11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p

MOSTRAR MÁS

Otros transistores... HMS11N60, HMS11N60D, HMS11N60F, HMS11N60I, HMS11N60K, HMS11N65, HMS11N65D, HMS11N65F, P55NF06, HMS11N65K, HMS11N70, HMS11N70B, HMS11N70D, HMS11N70F, HMS11N70I, HMS11N70K, HMS120N03D