HMS15N70B Todos los transistores

 

HMS15N70B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HMS15N70B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 104 W
   Voltaje máximo drenador - fuente |Vds|: 700 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 15 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 43 nC
   Tiempo de subida (tr): 11 nS
   Conductancia de drenaje-sustrato (Cd): 340 pF
   Resistencia entre drenaje y fuente RDS(on): 0.34 Ohm
   Paquete / Cubierta: TO262

 Búsqueda de reemplazo de MOSFET HMS15N70B

 

HMS15N70B Datasheet (PDF)

 ..1. Size:1235K  cn hmsemi
hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdf

HMS15N70B
HMS15N70B

HMS15N70K,HMS15N70I,HMS15N70HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET FeaturesGeneral Description Features -15A, 700V, RDS(on) typ.= 0.3@VGS = 10 V This Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailore

 8.1. Size:869K  cn hmsemi
hms15n65a.pdf

HMS15N70B
HMS15N70B

HMS15N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

 8.2. Size:578K  cn hmsemi
hms15n65i hms15n65k.pdf

HMS15N70B
HMS15N70B

HMS15N65I / HMS15N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial

 8.3. Size:989K  cn hmsemi
hms15n60 hms15n60f hms15n60d.pdf

HMS15N70B
HMS15N70B

HM 15N60D, HM 15N60, HM 15N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 60 gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and

 8.4. Size:952K  cn hmsemi
hms15n65 hms15n65f hms15n65d.pdf

HMS15N70B
HMS15N70B

HMS15N65D, HMS15N65, HMS15N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 15 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power ap

 8.5. Size:1023K  cn hmsemi
hms15n60a.pdf

HMS15N70B
HMS15N70B

HMS15N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 0 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


HMS15N70B
  HMS15N70B
  HMS15N70B
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top