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HMS20N15K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HMS20N15K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 68 W
   Voltaje máximo drenador - fuente |Vds|: 150 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 20 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 5.5 nS
   Conductancia de drenaje-sustrato (Cd): 74.7 pF
   Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
   Paquete / Cubierta: TO252

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HMS20N15K Datasheet (PDF)

 ..1. Size:494K  cn hmsemi
hms20n15k.pdf

HMS20N15K HMS20N15K

HMS20N15KN-Channel Super Trench Power MOSFET Description The HMS20N15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

 9.1. Size:465K  cn hmsemi
hms200n04d.pdf

HMS20N15K HMS20N15K

HMS200N04DN-Channel Super Trench Power MOSFET Description The HMS200N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

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