HMS4264 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HMS4264
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 680 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de HMS4264 MOSFET
HMS4264 Datasheet (PDF)
hms4264.pdf

HMS4264 N-Channel Super Trench Power MOSFET Description The HMS4264 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectif
hms4260.pdf

HMS4260 N-Channel Super Trench Power MOSFET Description The HMS4260 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectif
hms4296.pdf

HMS4296N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
hms4294.pdf

N-Channel Super Trench Power MOSFET Description The HMS4294 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
Otros transistores... HMS35DN10DA , HMS35N10K , HMS38N60T , HMS4030 , HMS4030D , HMS40N10D , HMS4110T , HMS4260 , EMB04N03H , HMS4290 , HMS4294 , HMS4296 , HMS4296B , HMS4438 , HMS4444A , HMS4454 , HMS45N15D .
History: AOW29S50 | UPA1792G | SVS70R360FE3 | PJE8400
History: AOW29S50 | UPA1792G | SVS70R360FE3 | PJE8400



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
transistor 2222a | 8050 transistor | bc238 | 2sb772 | 2n2222a-1726 datasheet | bc516 | 2n3391 equivalent | a562 transistor