FDMC8462 Todos los transistores

 ..1. Size:290K  fairchild semi
 fdmc8462.pdf

March 2008 FDMC8462 tm N-Channel Power Trench MOSFET 40V, 20A, 5.8m Features General Description Max rDS(on) = 5.8m at VGS = 10V, ID = 13.5A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 8.0m at VGS = 4.5V, ID = 11.8A been especially tailored to minimize the on-state resistance and Low Profi

 9.1. Size:465K  1
 fdmc8622.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.2. Size:381K  1
 fdmc86116lz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:374K  1
 fdmc86244.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:349K  fairchild semi
 fdmc8026s.pdf

March 2011 FDMC8026S N-Channel PowerTrench SyncFETTM 30 V, 21 A, 4.4 m Features General Description The FDMC8026S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest rDS

 9.5. Size:195K  fairchild semi
 fdmc86160.pdf

September 2014 FDMC86160 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 14 m at VGS = 10 V, ID = 9 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 23 m

 9.6. Size:245K  fairchild semi
 fdmc86012.pdf

October 2012 FDMC86012 N-Channel Power Trench MOSFET 30 V, 88 A, 2.7 m Features General Description Max rDS(on) = 2.7 m at VGS = 4.5 V, ID = 23 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 4.7 m at VGS = 2.5 V, ID = 17.5 A MOSFET construction, the various components of gate charge High p

 9.7. Size:318K  fairchild semi
 fdmc8030.pdf

July 2013 FDMC8030 Dual N-Channel Power Trench MOSFET 40 V, 12 A, 10 m Features General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 12 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 A enhanced for exceptional thermal performance. Max rDS(on) = 28 m at VGS =

 9.8. Size:299K  fairchild semi
 fdmc86324.pdf

May 2010 FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

 9.9. Size:300K  fairchild semi
 fdmc8651.pdf

July 2008 FDMC8651 N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 m Features General Description Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m at VGS = 2.5 V, ID = 12 A MOSFET construction, the various components of gate charge Low Profi

 9.10. Size:313K  fairchild semi
 fdmc86102l.pdf

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Prof

 9.11. Size:315K  fairchild semi
 fdmc86240.pdf

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m Features General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile -

 9.12. Size:545K  fairchild semi
 fdmc8010.pdf

December 2014 FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This device is

 9.13. Size:260K  fairchild semi
 fdmc86102lz.pdf

April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD prot

 9.14. Size:318K  fairchild semi
 fdmc86106lz.pdf

December 2010 FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 m Features General Description Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A that has been special tailored to minimize the on-state HBM E

 9.15. Size:395K  fairchild semi
 fdmc8622.pdf

December 2010 FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 m Features General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 3 A been optimized for rDS(on), switching performance and High performance trench t

 9.16. Size:290K  fairchild semi
 fdmc8327l.pdf

October 2013 FDMC8327L N-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Low Pro

 9.17. Size:191K  fairchild semi
 fdmc8554.pdf

February 2007 FDMC8554 tm N-Channel Power Trench MOSFET 20V, 16.5A, 5m Features General Description Max rDS(on) = 5m at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench process. Max rDS(on) = 6.4m at VGS = 4.5V, ID = 14A It has been optimized for switching performance and ultra low Low Profile

 9.18. Size:283K  fairchild semi
 fdmc86570let60.pdf

January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench MOSFET 60 V, 87 A, 4.3 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 m at VGS = 10

 9.19. Size:318K  fairchild semi
 fdmc86116lz.pdf

November 2013 FDMC86116LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A that incorporates Shielded Gate technology. This process has Max r

 9.20. Size:395K  fairchild semi
 fdmc8588dc.pdf

June 2012 FDMC8588DC N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 m Features General Description Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node State-of-the-art switching performance ringing of DC/DC converters using either synchronous or Lower output capacita

 9.21. Size:353K  fairchild semi
 fdmc8296.pdf

Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0V 30 V BVDSS Breakdown Voltage Temperature ID = 250 A, referenced to 25 C 17 mV/ C TJ Coefficient VDS = 24V, 1 IDSS Zero Gate Voltage Drain Current A VGS = 0V, TJ = 125 C 250 IGSS Gate t

 9.22. Size:339K  fairchild semi
 fdmc8882.pdf

September 2010 FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m Features General Description Max rDS(on) = 14.3 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8.3 A been especially tailored to minimize the on-state resistance. This Hi

 9.23. Size:322K  fairchild semi
 fdmc8015l.pdf

April 2011 FDMC8015L N-Channel Power Trench MOSFET 40 V, 18 A, 26 m Features General Description Max rDS(on) = 26 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6 A been especially tailored to minimize the on-state resistance and Low Profile - 1 m

 9.24. Size:281K  fairchild semi
 fdmc86340et80.pdf

January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench MOSFET 80 V, 68 A, 6.5 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

 9.25. Size:479K  fairchild semi
 fdmc8200.pdf

June 2009 FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 m and 20 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 20 m at VGS = 10 V, ID = 6 A has been internally connected to enable easy placement and Max rDS(on) = 32 m at VGS = 4.5 V,

 9.26. Size:256K  fairchild semi
 fdmc86248.pdf

September 2012 FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 m Features General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance

 9.27. Size:244K  fairchild semi
 fdmc8878.pdf

December 2010 FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m Features General Description Max rDS(on) = 14m at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7A process. It has been optimized for power management Low Profile - 0.8 mm max in MLP 3.3X3.

 9.28. Size:367K  fairchild semi
 fdmc8360l.pdf

June 2013 FDMC8360L N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 2.1 m at VGS = 10 V, ID = 27 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 m

 9.29. Size:344K  fairchild semi
 fdmc86102.pdf

July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile -

 9.30. Size:293K  fairchild semi
 fdmc86160et100.pdf

January 2015 FDMC86160ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,

 9.31. Size:263K  fairchild semi
 fdmc8321l.pdf

February 2013 FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 A ringing of DC/DC converters using either synchronous or Advanced

 9.32. Size:246K  fairchild semi
 fdmc86260.pdf

December 2012 FDMC86260 N-Channel Power Trench MOSFET 150 V, 16 A, 34 m Features General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf

 9.33. Size:354K  fairchild semi
 fdmc8854.pdf

June 2014 FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7m Features General Description Max rDS(on) = 5.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 7.6m at VGS = 4.5V, ID = 13A process. It has been optimized for power management Low Profile - 1mm max in Power 33 applica

 9.34. Size:241K  fairchild semi
 fdmc86340.pdf

 9.35. Size:282K  fairchild semi
 fdmc8678s.pdf

July 2009 FDMC8678S tm N-Channel Power Trench SyncFETTM 30V, 18A, 5.2m Features General Description Max rDS(on) = 5.2m at VGS = 10V, ID = 15A The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 8.7m at VGS = 4.5V, ID = 12A and package technologies have been combined to offer the Advanced Pack

 9.36. Size:328K  fairchild semi
 fdmc86244.pdf

October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m Features General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Pr

 9.37. Size:382K  fairchild semi
 fdmc86139p.pdf

June 2014 FDMC86139P P-Channel PowerTrench MOSFET -100 V, -15 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 89 m at VGS = -6 V, ID = -3.6 A very high density process is especially tailored to minimize Very low RDS-

 9.38. Size:345K  fairchild semi
 fdmc8588.pdf

November 2014 FDMC8588 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 m Features General Description Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node State-of-the-art switching performance ringing of DC/DC converters using either synchronous or Lower output cap

 9.39. Size:333K  fairchild semi
 fdmc8032l.pdf

October 2013 FDMC8032L Dual N-Channel PowerTrench MOSFET 40 V, 7 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = 10 V, ID = 7 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 m at VGS = 4.5 V, ID = 6 A enhanced for exceptional thermal performance. Low Inductance Packaging Short

 9.40. Size:269K  fairchild semi
 fdmc86520l.pdf

August 2011 FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 m Features General Description Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or Low P

 9.41. Size:461K  fairchild semi
 fdmc8200s.pdf

March 2011 FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 m , 20 m Features General Description This device includes two specialized N-Channel MOSFETs in a Q1 N-Channel due power33(3mm X 3mm MLP) package. The switch node has Max rDS(on) = 20 m at VGS = 10 V, ID = 6 A been internally connected to enable easy placement and routing of synchronous buck converters. The

 9.42. Size:347K  fairchild semi
 fdmc8884.pdf

October 2010 FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 m Features General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7.2 A been especially tailored to minimize the on-state resistance. This High per

 9.43. Size:277K  fairchild semi
 fdmc86520dc.pdf

September 2012 FDMC86520DC N-Channel Dual CoolTM PowerTrench MOSFET 60 V, 40 A, 6.3 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.3 m at VGS = 10 V, ID = 17 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 m

 9.44. Size:561K  fairchild semi
 fdmc8321ldc.pdf

December 2014 FDMC8321LDC N-Channel Power Trench MOSFET 40 V, 108 A, 2.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.

 9.45. Size:269K  fairchild semi
 fdmc86260et150.pdf

January 2015 FDMC86260ET150 N-Channel Power Trench MOSFET 150 V, 25 A, 34 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at

 9.46. Size:413K  fairchild semi
 fdmc8010et30.pdf

January 2015 FDMC8010ET30 N-Channel PowerTrench MOSFET 30 V, 174 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A been especially tailored to minimize the on-state resistance. This device is well suited for

 9.47. Size:263K  fairchild semi
 fdmc8676.pdf

December 2007 FDMC8676 tm N-Channel PowerTrench MOSFET 30V, 18A, 5.9m Features General Description Max rDS(on) = 5.9m at VGS = 10V, ID = 14.7A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3m at VGS = 4.5V, ID = 11.5A MOSFET construction, the various components of gate charge Low Prof

 9.48. Size:351K  fairchild semi
 fdmc89521l.pdf

July 2013 FDMC89521L Dual N-Channel PowerTrench MOSFET 60 V, 8.2 A, 17 m Features General Description This device includes two 60 V N-Channel MOSFETs in a dual Max rDS(on) = 17 m at VGS = 10 V, ID = 8.2 A Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 m at VGS = 4.5 V, ID = 6.7 A enhanced for exceptional thermal performance. Termination is Lead-free

 9.49. Size:172K  fairchild semi
 fdmc86259p.pdf

February 2014 FDMC86259P P-Channel PowerTrench MOSFET -150 V, -13 A, 107 m Features General Description Max rDS(on) = 107 m at VGS = -10 V, ID = -3 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 137 m at VGS = -6 V, ID = -2.7 A been especially tailored to minimize the on-state resistance and Very l

 9.50. Size:379K  fairchild semi
 fdmc86261p.pdf

June 2014 FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m Features General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD

 9.51. Size:328K  fairchild semi
 fdmc86262p.pdf

April 2015 FDMC86262P P-Channel PowerTrench MOSFET -150 V, -2 A, 307 m Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 A Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 A very high density process is especially tailored to minimize on- state resis

 9.52. Size:492K  fairchild semi
 fdmc86320.pdf

June 2014 FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or MSL1 robust

 9.53. Size:373K  fairchild semi
 fdmc86570l.pdf

May 2013 FDMC86570L N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m Features Shielded Gate MOSFET Technology General Description Max rDS(on) = 4.3 m at VGS = 10 V, ID = 18 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 4.5 V, ID = 15 A incorporates Shielded Gate technolo

 9.54. Size:288K  fairchild semi
 fdmc86265p.pdf

May 2014 FDMC86265P P-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Very low RDS-on mid

 9.55. Size:286K  onsemi
 fdmc86160.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.56. Size:307K  onsemi
 fdmc8651.pdf

FDMC8651 General Description N-Channel Power Trench MOSFET This device has been designed specifically to improve the 30 V, 20 A, 6.1 m efficiency of DC/DC converters. Using new techniques in Features MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A losses. Low g

 9.57. Size:488K  onsemi
 fdmc86102l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.58. Size:561K  onsemi
 fdmc8010.pdf

FDMC8010 MOSFET N-Channel, POWERTRENCH) 30 V, 75 A, 1.3 mW General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that has been especially tailored Pin 1 Pin 1 S S to minimize the on-state resistance. This device is well suited for S G applications where ultra low rDS(on) is required in small spaces such as

 9.59. Size:327K  onsemi
 fdmc8010dc.pdf

FDMC8010DC MOSFET N-Channel, DUAL COOL) 33, POWERTRENCH) 30 V, 157 A, 1.28 mW www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s DD D D advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer G S the lowest rDS(on) while maintaining excellent switching performance S

 9.60. Size:1588K  onsemi
 fdmc8878.pdf

 9.61. Size:464K  onsemi
 fdmc86102.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.62. Size:418K  onsemi
 fdmc86260.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.63. Size:374K  onsemi
 fdmc86244.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.64. Size:858K  onsemi
 fdmc86520l.pdf

FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 m General Description Features This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 A conventional switchi

 9.65. Size:479K  onsemi
 fdmc8200s.pdf

FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 m , 20 m General Description This device includes two specialized N-Channel MOSFETs in a Features due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing Q1 N-Channel of synchronous buck converters. The control MOSFET (Q1) and Max rDS(on) = 20 m at VGS = 10

 9.66. Size:369K  onsemi
 fdmc89521l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.67. Size:370K  onsemi
 fdmc86262p.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.68. Size:325K  onsemi
 fdmc86570l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur