HMS8N60K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HMS8N60K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 58 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm

Encapsulados: TO252

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HMS8N60K datasheet

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HMS8N60K

HMS8N60I, HMS8N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati

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 hms8n60 hms8n60f hms8n60d.pdf pdf_icon

HMS8N60K

HMS8N60D, HMS8N60, HMS8N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power

 8.1. Size:933K  cn hmsemi
 hms8n65 hms8n65f hms8n65d.pdf pdf_icon

HMS8N60K

HMS8N65D, HMS8N65, HMS8N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic

 8.2. Size:797K  cn hmsemi
 hms8n65k hms8n65i.pdf pdf_icon

HMS8N60K

HMS8N65I, HMS8N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

MOSTRAR MÁS

Otros transistores... HMS85N95, HMS85N95D, HMS8N50I, HMS8N50K, HMS8N60, HMS8N60D, HMS8N60F, HMS8N60I, IRLB4132, HMS8N65, HMS8N65D, HMS8N65F, HMS8N65I, HMS8N65K, HMS8N70, HMS8N70D, HMS8N70F