HMS8N70I Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HMS8N70I  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V

Qgⓘ - Carga de la puerta: 14.5 nC

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 58 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO251

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HMS8N70I datasheet

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HMS8N70I

HMS8N70I,HMS8N70K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DS technology and design to provide excellent RDS(ON) with low R 540 m DS(ON) TYP. gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic

 7.1. Size:965K  cn hmsemi
 hms8n70d hms8n70 hms8n70f.pdf pdf_icon

HMS8N70I

HMS8N70D,HMS8N70,HMS8N70F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 9.1. Size:757K  cn hmsemi
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HMS8N70I

HMS8N60I, HMS8N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati

 9.2. Size:933K  cn hmsemi
 hms8n65 hms8n65f hms8n65d.pdf pdf_icon

HMS8N70I

HMS8N65D, HMS8N65, HMS8N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic

MOSTRAR MÁS

Otros transistores... HMS8N65, HMS8N65D, HMS8N65F, HMS8N65I, HMS8N65K, HMS8N70, HMS8N70D, HMS8N70F, AON7410, HMS8N70K, HMS90N04D, AO3413L, CSD30N70, FNK6075K, KMK1265F, ZM075N03D, YSP040N010T1A