VS3628DE-G Todos los transistores

 ..1. Size:1215K  cn vgsemi
 vs3628de-g.pdf

VS3628DE-G 30V/14A Dual N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 10 m Dual N-Channel R DS(on),TYP@ VGS=4.5V 14 m Enhancement mode I D(Silicon Limited) 38 A VitoMOS Technology I D(Package Limited) 14 A Fast Switching and High efficiency PDFN3333 Dual 100% Avalanche Tested,100% Rg Tested Part ID Package Type Marking Pac

 7.1. Size:1353K  cn vgsemi
 vs3628db.pdf

VS3628DB 30V Dual Asymmetric N-Channel Advanced Power MOSFET V DS 30 30 V Features R DS(on),TYP@ VGS=10 V 14 6 m Dual Asymmetric N-Channel R DS(on),TYP@ VGS=4.5V 23 9 m High Current Capability I D 20 40 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate Charge DFN3x3 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3628DB DFN3x3 3

 8.1. Size:1117K  cn vgsemi
 vs3628gp.pdf

VS3628GP 30V/24A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 9.1 m Enhancement mode R DS(on),TYP@ VGS=4.5V 13 m VitoMOS Technology I D(Silicon Limited) 26 A Fast Switching and High efficiency I D(Package Limited) 24 A 100% Avalanche Tested,100% Rg Tested PDFN5x6 Part ID Package Type Marking Packing VS3628GP PDFN5x6 3628GP 30

 8.2. Size:839K  cn vgsemi
 vs3628ge.pdf

VS3628GE 30V/24A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 8.4 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 13 m VitoMOS Technology I D(Silicon Limited) 45 A Fast Switching and High efficiency I D(Package Limited) 24 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VS3628GE PDFN3333 3628G

 8.3. Size:1116K  cn vgsemi
 vs3628ga.pdf

VS3628GA 30V/12A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 9.4 m R DS(on),TYP@ VGS=4.5 V 13 m Enhancement mode VitoMOS Technology I D 12 A Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses DFN2x2x0.75-6L Part ID Package Type Marking Packing VS3628GA DFN2x2x0.75-6L 3628 3000PCS/Reel Maximum ratings, at TA =25 C,