VS3628DE-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS3628DE-G
Código: 3628DE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 29 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 38 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 8.4 nC
Tiempo de subida (tr): 32 nS
Conductancia de drenaje-sustrato (Cd): 295 pF
Resistencia entre drenaje y fuente RDS(on): 0.013 Ohm
Paquete / Cubierta: PDFN3333
Búsqueda de reemplazo de MOSFET VS3628DE-G
VS3628DE-G Datasheet (PDF)
vs3628de-g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VS3628DE-G30V/14A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 10 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 14 m Enhancement modeI D(Silicon Limited) 38 A VitoMOS TechnologyI D(Package Limited) 14 A Fast Switching and High efficiencyPDFN3333 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Pac
vs3628db.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VS3628DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 14 6 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 23 9 m High Current CapabilityI D 20 40 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate ChargeDFN3x3 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3628DB DFN3x3 3
vs3628gp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VS3628GP30V/24A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 9.1 m Enhancement modeR DS(on),TYP@ VGS=4.5V 13 m VitoMOS TechnologyI D(Silicon Limited) 26 A Fast Switching and High efficiencyI D(Package Limited) 24 A 100% Avalanche Tested,100% Rg TestedPDFN5x6Part ID Package Type Marking PackingVS3628GP PDFN5x6 3628GP 30
vs3628ge.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VS3628GE30V/24A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 13 m VitoMOS TechnologyI D(Silicon Limited) 45 A Fast Switching and High efficiencyI D(Package Limited) 24 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3628GE PDFN3333 3628G
vs3628ga.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VS3628GA30V/12A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 9.4 mR DS(on),TYP@ VGS=4.5 V 13 m Enhancement mode VitoMOS Technology I D 12 A Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3628GA DFN2x2x0.75-6L 3628 3000PCS/ReelMaximum ratings, at TA =25C,
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
![VS3628DE-G](https://alltransistors.com/images/us.png)
![VS3628DE-G](https://alltransistors.com/images/es.png)
![VS3628DE-G](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C