FDD6030BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD6030BL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 249 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET FDD6030BL

FDD6030BL Datasheet (PDF)

..1. Size:71K fairchild semi
fdd6030bl fdu6030bl.pdf

July 2001 FDD6030BL/FDU6030BL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 42 A, 30 V R = 16 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 22 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. It has been optimized for

..2. Size:309K inchange semiconductor
fdd6030bl.pdf

isc N-Channel MOSFET Transistor FDD6030BLFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

7.1. Size:117K fairchild semi
fdd6030l.pdf

August 2003FDD6030L30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 12 A, 30 V RDS(ON) = 14.5 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 21 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate charge

7.2. Size:309K inchange semiconductor
fdd6030l.pdf

isc N-Channel MOSFET Transistor FDD6030LFEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 13.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.1. Size:104K fairchild semi
fdd603al.pdf

July 1999FDD603ALN-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel logic level enhancement mode power 33 A, 30 V. RDS(ON) = 0.023 @ VGS = 10 Vfield effect transistor is produced using Fairchilds RDS(ON) = 0.037 @ VGS = 4.5 V.proprietary, high cell density, DMOS technology. Thisvery high density process is tai

8.2. Size:119K fairchild semi
fdd6035al.pdf

July 2003FDD6035AL30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate charges

8.3. Size:886K cn vbsemi
fdd6035al.pdf

FDD6035ALwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL

8.4. Size:309K inchange semiconductor
fdd603al.pdf

isc N-Channel MOSFET Transistor FDD603ALFEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

8.5. Size:309K inchange semiconductor
fdd6035al.pdf

isc N-Channel MOSFET Transistor FDD6035ALFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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