FDMC8622 Todos los transistores

 

FDMC8622 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC8622

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 31 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.056 Ohm

Empaquetado / Estuche: POWER33

Búsqueda de reemplazo de MOSFET FDMC8622

 

FDMC8622 Datasheet (PDF)

1.1. fdmc8622.pdf Size:395K _fairchild_semi

FDMC8622
FDMC8622

December 2010 FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 m? Features General Description Max rDS(on) = 56 m? at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 100 m? at VGS = 6 V, ID = 3 A been optimized for rDS(on), switching performance and High performance trench technology

3.1. fdmc86262p.pdf Size:328K _upd-mosfet

FDMC8622
FDMC8622

April 2015 FDMC86262P P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A Semiconductor’s advanced PowerTrench® technology. This Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A very high density process is especially tailored to minimize on- state resis

3.2. fdmc86260et150.pdf Size:269K _upd-mosfet

FDMC8622
FDMC8622

January 2015 FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 mΩ at

 3.3. fdmc86265p.pdf Size:288K _fairchild_semi

FDMC8622
FDMC8622

May 2014 FDMC86265P P-Channel PowerTrench® MOSFET -150 V, -1 A, 1.2 Ω Features General Description Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Very low RDS-on mid

3.4. fdmc86244.pdf Size:328K _fairchild_semi

FDMC8622
FDMC8622

October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m? Features General Description Max rDS(on) = 134 m? at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m? at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Profile - 1

 3.5. fdmc86260.pdf Size:246K _fairchild_semi

FDMC8622
FDMC8622

December 2012 FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ Features General Description Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf

3.6. fdmc86259p.pdf Size:172K _fairchild_semi

FDMC8622
FDMC8622

February 2014 FDMC86259P P-Channel PowerTrench® MOSFET -150 V, -13 A, 107 m Features General Description Max rDS(on) = 107 m at VGS = -10 V, ID = -3 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has Max rDS(on) = 137 m at VGS = -6 V, ID = -2.7 A been especially tailored to minimize the on-state resistance and Very l

3.7. fdmc86248.pdf Size:256K _fairchild_semi

FDMC8622
FDMC8622

September 2012 FDMC86248 N-Channel Power Trench® MOSFET 150 V, 13 A, 90 mΩ Features General Description Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance

3.8. fdmc86261p.pdf Size:379K _fairchild_semi

FDMC8622
FDMC8622

June 2014 FDMC86261P P-Channel PowerTrench® MOSFET -150 V, -9 A, 160 mΩ Features General Description Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD

3.9. fdmc86240.pdf Size:315K _fairchild_semi

FDMC8622
FDMC8622

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m? Features General Description Max rDS(on) = 51 m? at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m? at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max

Otros transistores... FDMC86102 , STP652F , FDMC86102L , STP60L60F , FDMC86102LZ , STP60L60A , FDMC86106LZ , STP60L60 , RFP50N06 , STP45L01F , FDMC86240 , FDMC86244 , FDMC86324 , FDMC8651 , STP454 , FDMC86520L , FDMC8878 .

 

 
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