FDMC8622 Todos los transistores

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

December 2010 FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 m Features General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 3 A been optimized for rDS(on), switching performance and High performance trench t... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m Features General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile -... See More ⇒

September 2012 FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 m Features General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance... See More ⇒

December 2012 FDMC86260 N-Channel Power Trench MOSFET 150 V, 16 A, 34 m Features General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf... See More ⇒

October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m Features General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Pr... See More ⇒

January 2015 FDMC86260ET150 N-Channel Power Trench MOSFET 150 V, 25 A, 34 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at... See More ⇒

February 2014 FDMC86259P P-Channel PowerTrench MOSFET -150 V, -13 A, 107 m Features General Description Max rDS(on) = 107 m at VGS = -10 V, ID = -3 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 137 m at VGS = -6 V, ID = -2.7 A been especially tailored to minimize the on-state resistance and Very l... See More ⇒

June 2014 FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m Features General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD... See More ⇒

April 2015 FDMC86262P P-Channel PowerTrench MOSFET -150 V, -2 A, 307 m Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 A Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 A very high density process is especially tailored to minimize on- state resis... See More ⇒

May 2014 FDMC86265P P-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Very low RDS-on mid... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒