FDD6676 Todos los transistores

 

FDD6676 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD6676

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 78 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 836 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO252

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FDD6676 datasheet

 ..1. Size:80K  fairchild semi
fdd6676.pdf pdf_icon

FDD6676

April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

 ..2. Size:287K  inchange semiconductor
fdd6676.pdf pdf_icon

FDD6676

isc N-Channel MOSFET Transistor FDD6676 FEATURES Drain Current I =78A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.1. Size:117K  fairchild semi
fdd6676s.pdf pdf_icon

FDD6676

December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge

 0.2. Size:411K  fairchild semi
fdd6676as.pdf pdf_icon

FDD6676

April 2008 FDD6676AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single 90 A, 30 V RDS(ON) = 5.7 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includ

Otros transistores... VS4640DE , VSA007N02KD , SD2933W , FDD6030BL , FDD603AL , FDD6644 , FDU6644 , FDD6670S , EMB04N03H , FDD6676S , FDD6680S , FDD6692 , FDU6692 , FDH20N40 , FDP20N40 , FDH34N40 , FMV60N280S2HF .

History: TK560A60Y | WSF07N10 | STW70N65M2

 

 

 

 

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