FDD6676S MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDD6676S datasheet

..1. Size:117K fairchild semi
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December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge

..2. Size:287K inchange semiconductor
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isc N-Channel MOSFET Transistor FDD6676S FEATURES Drain Current I =78A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

7.1. Size:80K fairchild semi
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April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

7.2. Size:411K fairchild semi
fdd6676as.pdf pdf_icon

April 2008 FDD6676AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single 90 A, 30 V RDS(ON) = 5.7 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includ