FDD6680S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD6680S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 55 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 17 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 526 pF
Resistencia entre drenaje y fuente RDS(on): 0.011 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET FDD6680S
FDD6680S Datasheet (PDF)
fdd6680s.pdf
December 2000FDD6680S30V N-Channel PowerTrench SyncFETGeneral Description FeaturesThe FDD6680S is designed to replace a single 55 A, 30 V RDS(ON) = 11 m @ VGS = 10 VMOSFET and Schottky diode in synchronous DC:DCRDS(ON) = 17 m @ VGS = 4.5 Vpower supplies. This 30V MOSFET is designed tomaximize power conversion efficiency, providing a low Inclu
fdd6680s.pdf
isc N-Channel MOSFET Transistor FDD6680SFEATURESDrain Current : I =55A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =11m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
fdd6680.pdf
July 1999FDD6680N-Channel Logic Level PWM Optimized PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel Logic level MOSFET has been designed 55 A, 30 V. RDS(on) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(on) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventionalswitching PWM controllers. Optimi
fdd6680as.pdf
April 2008FDD6680AS tm30V N-Channel PowerTrench SyncFETGeneral Description Features The FDD6680AS is designed to replace a single 55 A, 30 V RDS(ON) max= 10.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 13.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
fdd6680a.pdf
February 2000FDD6680AN-Channel, Logic Level, PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel Logic level MOSFET is produced using 56 A, 30 V. RDS(ON) = 0.0095 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.0130 @ VGS = 4.5 V.that has been especially tailored to minimize the on-stateresistance and y
fdd6680.pdf
FDD6680www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU
fdd6680.pdf
isc N-Channel MOSFET Transistor FDD6680FEATURESDrain Current : I =46A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =10m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
fdd6680as.pdf
isc N-Channel MOSFET Transistor FDD6680ASFEATURESDrain Current : I =55A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =10.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
fdd6680a.pdf
isc N-Channel MOSFET Transistor FDD6680AFEATURESDrain Current : I =56A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =9.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PJA3411
