MDP10N055TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDP10N055TH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 188 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 78 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 1108 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET MDP10N055TH

MDP10N055TH Datasheet (PDF)

..1. Size:954K magnachip
mdp10n055th.pdf

MDP10N055TH Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055TH uses advanced Magnachips MOSFET V = 100V DSTechnology, which provides high performance in on-state resistance, I = 120A @V = 10V D GSfast switching performance, and excellent quality. Very low on-resistance R DS(ON)

..2. Size:288K inchange semiconductor
mdp10n055th.pdf

isc N-Channel MOSFET Transistor MDP10N055THFEATURESDrain Current : I = 130A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

5.1. Size:1025K magnachip
mdp10n055.pdf

MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055 uses advanced MagnaChips MOSFET Technology, V = 100V DSwhich provides high performance in on-state resistance, fast I = 120A @V = 10V D GSswitching performance, and excellent quality. Very low on-resistance R DS(ON)

5.2. Size:206K inchange semiconductor
mdp10n055.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP10N055FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU

7.1. Size:1067K 1
mdp10n027th.pdf

MDP10N027TH Single N-channel Trench MOSFET 100V, 120A, 2.8m General Description Features The MDP10N027TH uses advanced Magnachips MOSFET V = 100V DSTechnology, which provides high performance in on-state resistance, I = 120A @V = 10V D GSfast switching performance, and excellent quality. Very low on-resistance R DS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: