MMD80R1K2QZRH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMD80R1K2QZRH
   Código: 80R1K2QZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO252

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MMD80R1K2QZRH Datasheet (PDF)

..1. Size:1227K magnachip
mmd80r1k2qzrh.pdf

MMD80R1K2QZ Datasheet MMD80R1K2QZ 800V 1.2 N-channel MOSFET Description MMD80R1K2QZ is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

5.1. Size:1477K magnachip
mmd80r1k2prh.pdf

MMD80R1K2P Final Datasheet MMD80R1K2P 800V 1.2 N-channel MOSFET Description MMD80R1K2P is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

5.2. Size:309K inchange semiconductor
mmd80r1k2prh.pdf

isc N-Channel MOSFET Transistor MMD80R1K2PRHFEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

8.1. Size:1279K magnachip
mmd80r900prh.pdf

MMD80R900P Datasheet MMD80R900P 800V 0.9 N-channel MOSFET Description MMD80R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

8.2. Size:1333K magnachip
mmd80r900qzrh.pdf

MMD80R900QZ Datasheet MMD80R900QZ 800V 0.90 N-channel MOSFET Description MMD80R900QZ is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

8.3. Size:1323K magnachip
mmd80r900pcrh.pdf

MMD80R900PC Datasheet MMD80R900PC 800V 0.9 N-channel MOSFET Description MMD80R900PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

8.4. Size:208K inchange semiconductor
mmd80r900p.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMD80R900PFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(

8.5. Size:310K inchange semiconductor
mmd80r900prh.pdf

isc N-Channel MOSFET Transistor MMD80R900PRHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

8.6. Size:310K inchange semiconductor
mmd80r900pcrh.pdf

isc N-Channel MOSFET Transistor MMD80R900PCRHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

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