MMF60R190QTH Todos los transistores

 

MMF60R190QTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMF60R190QTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 89 nS
   Cossⓘ - Capacitancia de salida: 1352 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220F
 

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MMF60R190QTH Datasheet (PDF)

 ..1. Size:1588K  magnachip
 mmf60r190qth.pdf pdf_icon

MMF60R190QTH

MMF60R190Q Datasheet MMF60R190Q 600V 0.19 N-channel MOSFET Description MMF60R190Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:279K  inchange semiconductor
 mmf60r190qth.pdf pdf_icon

MMF60R190QTH

isc N-Channel MOSFET Transistor MMF60R190QTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 5.1. Size:1243K  magnachip
 mmf60r190pth.pdf pdf_icon

MMF60R190QTH

MMF60R190P Datasheet MMF60R190P 600V 0.19 N-channel MOSFET Description MMF60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:279K  inchange semiconductor
 mmf60r190pth.pdf pdf_icon

MMF60R190QTH

isc N-Channel MOSFET Transistor MMF60R190PTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

MOSTRAR MÁS

Otros transistores... MMD65R380QRH , MMD80R1K2PRH , MMD80R1K2QZRH , MMD80R900PCRH , MMD80R900QZRH , MME60R290QRH , MME65R280QRH , MME80R290PRH , IRF9540 , MMF60R280QBTH , MMF60R580QTH , MMF65R600QTH , MMF80R450PBTH , MMF80R450QZTH , MMF80R900PCTH , MMF80R900QZTH , MMF80R900PBTH .

History: TK12A55D | 1N65L-K08-5060-R | KRF7309 | 4N80G-TN3-R | BLP05N08G-P | FQB9N50TM | 2SJ549L

 

 
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