MMF60R580QTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMF60R580QTH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 427 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de MMF60R580QTH MOSFET
- Selecciónⓘ de transistores por parámetros
MMF60R580QTH datasheet
mmf60r580qth.pdf
MMF60R580Q Datasheet MMF60R580Q 600V 0.58 N-channel MOSFET Description MMF60R580Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf60r580qth.pdf
isc N-Channel MOSFET Transistor MMF60R580QTH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
mmf60r580pth.pdf
MMF60R580P Datasheet MMF60R580P 600V 0.58 N-channel MOSFET Description MMF60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf60r580pth.pdf
isc N-Channel MOSFET Transistor MMF60R580PTH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
Otros transistores... MMD80R1K2QZRH , MMD80R900PCRH , MMD80R900QZRH , MME60R290QRH , MME65R280QRH , MME80R290PRH , MMF60R190QTH , MMF60R280QBTH , 8205A , MMF65R600QTH , MMF80R450PBTH , MMF80R450QZTH , MMF80R900PCTH , MMF80R900QZTH , MMF80R900PBTH , MMFT60R195PCTH , S40N14S .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
2n2905 equivalent | 2sa640 | 2sb527 | 30g124 | 75339p mosfet | a968 transistor | f1010e mosfet | 2sc3883
