MMF80R450PBTH Todos los transistores

 

MMF80R450PBTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMF80R450PBTH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 44 nS

Cossⓘ - Capacitancia de salida: 989 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO220F

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MMF80R450PBTH datasheet

 ..1. Size:1626K  magnachip
mmf80r450pbth.pdf pdf_icon

MMF80R450PBTH

MMF80R450PB Datasheet MMF80R450PB 800V 0.45 N-channel MOSFET Description MMF80R450PB is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 ..2. Size:279K  inchange semiconductor
mmf80r450pbth.pdf pdf_icon

MMF80R450PBTH

isc N-Channel MOSFET Transistor MMF80R450PBTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 4.1. Size:1404K  magnachip
mmf80r450p.pdf pdf_icon

MMF80R450PBTH

MMF80R450P Datasheet MMF80R450P 800V 0.45 N-channel MOSFET Description MMF80R450P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 4.2. Size:279K  inchange semiconductor
mmf80r450pth.pdf pdf_icon

MMF80R450PBTH

isc N-Channel MOSFET Transistor MMF80R450PTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

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