MMF80R450PBTH Todos los transistores

 

MMF80R450PBTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMF80R450PBTH
   Código: 80R450PB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 33.6 W
   Voltaje máximo drenador - fuente |Vds|: 800 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 11 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 37.6 nC
   Tiempo de subida (tr): 44 nS
   Conductancia de drenaje-sustrato (Cd): 989 pF
   Resistencia entre drenaje y fuente RDS(on): 0.45 Ohm
   Paquete / Cubierta: TO220F

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MMF80R450PBTH Datasheet (PDF)

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mmf80r450pbth.pdf

MMF80R450PBTH MMF80R450PBTH

MMF80R450PB Datasheet MMF80R450PB 800V 0.45 N-channel MOSFET Description MMF80R450PB is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 ..2. Size:279K  inchange semiconductor
mmf80r450pbth.pdf

MMF80R450PBTH MMF80R450PBTH

isc N-Channel MOSFET Transistor MMF80R450PBTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 4.1. Size:1404K  magnachip
mmf80r450p.pdf

MMF80R450PBTH MMF80R450PBTH

MMF80R450P Datasheet MMF80R450P 800V 0.45 N-channel MOSFET Description MMF80R450P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 4.2. Size:279K  inchange semiconductor
mmf80r450pth.pdf

MMF80R450PBTH MMF80R450PBTH

isc N-Channel MOSFET Transistor MMF80R450PTHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 4.3. Size:200K  inchange semiconductor
mmf80r450p.pdf

MMF80R450PBTH MMF80R450PBTH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF80R450PFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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