STP1806 Todos los transistores

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 stp1806.pdf

STP1806 N-CHANNEL 60V - 0.015 - 50A TO-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP1806 60 V

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 stp180n4f6.pdf

STP180N4F6 N-channel 40 V, 2.1 m typ., 120 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP180N4F6 40 V 2.7 m 120 A 190 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Power

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 stp180n10f3.pdf

STP180N10F3 N-channel 100 V, 4.5 m , 120 A STripFET III Power MOSFET TO-220 Features RDS(on) TAB Order codes VDSS ID max. STP180N10F3 100 V 5.1 m 120 A Ultra low on-resistance 3 2 100% avalanche tested 1 TO-220 Applications High current switching applications Description This device is an N-channel enhancement mode Figure 1. Internal schematic diagram Po

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 stb180n55f3 stp180n55f3.pdf

STB180N55F3 STP180N55F3 N-channel 55V - 3.2m - 120A - D2PAK/TO-220 STripFET Power MOSFET Features Type VDSS RDS(on) ID Pw STB180N55F3 55V 3.5m 120A(1) 330W STP180N55F3 55V 3.8m 120A(1) 330W 1. Value limited by wire bonding 3 3 1 2 1 Ultra low on-resistance 100% avalanche tested TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is the l

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 stp180ns04zc.pdf

STP180NS04ZC N-channel 40 V clamped 3.6 m typ., 120 A fully protected SAFeFET Power MOSFET in a TO-220 package Datasheet - production data Features TAB Order code VDS RDS(on) max ID STP180NS04ZC 40 V clamped 4.2 m 120 A Low capacitance and gate charge 100% avalanche tested 3 2 175 C maximum junction temperature 1 TO-220 Applications Switching and line