FDMC8651 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMC8651
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 41 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0061 Ohm
Paquete / Cubierta: POWER33
Búsqueda de reemplazo de FDMC8651 MOSFET
FDMC8651 Datasheet (PDF)
fdmc8651.pdf

July 2008FDMC8651N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 mFeatures General Description Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m at VGS = 2.5 V, ID = 12 AMOSFET construction, the various components of gate charge Low Profi
fdmc8651.pdf

FDMC8651General DescriptionN-Channel Power Trench MOSFETThis device has been designed specifically to improve the 30 V, 20 A, 6.1 mefficiency of DC/DC converters. Using new techniques in FeaturesMOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 Alosses. Low g
fdmc86570let60.pdf

January 2015FDMC86570LET60N-Channel Shielded Gate PowerTrench MOSFET60 V, 87 A, 4.3 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 m at VGS = 10
fdmc86520l.pdf

August 2011FDMC86520LN-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mFeatures General Description Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 Aringing of DC/DC converters using either synchronous or Low P
Otros transistores... STP60L60A , FDMC86106LZ , STP60L60 , FDMC8622 , STP45L01F , FDMC86240 , FDMC86244 , FDMC86324 , IRF630 , STP454 , FDMC86520L , FDMC8878 , STP4410 , FDMC8882 , STP423S , FDMC8884 , STP35N10 .
History: 2SK3513-01S | KNP3208A | 2SK2749 | 2SK3412D | SSF7510 | AOWF10N65 | KNP2803A
History: 2SK3513-01S | KNP3208A | 2SK2749 | 2SK3412D | SSF7510 | AOWF10N65 | KNP2803A



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