STP454 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GreenProductSTB/P454aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.4.8 @ VGS=10VTO-220 & TO-263 package.40V 80A7.2 @ VGS=4.5V DGSTB SERIESSTP SERIESTO-263(DD

STB45NF06STP45NF06N-channel 60 V, 0.023 , 38 A TO-220, D2PAKSTripFETTM II Power MOSFETFeaturesType VDSS RDS(on) IDSTP45NF06 60 V

STP45NE06STP45NE06FPN - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NE06 60 V

STP45NE06STP45NE06FPN - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NE06 60 V

STP45NF3LL - STP45NF3LLFPSTB45NF3LLN-CHANNEL 30V - 0.014 - 45A TO-220 - TO220FP - D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP45NF3LL 30 V

STP45NF06N-CHANNEL 60V - 0.022 - 38A TO-220STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NF06 60V

STB45N65M5, STF45N65M5, STP45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTAB2 Order codes VDSS @ TJmax RDS(on) max ID31STB45N65M532D2PAK1STF45N65M5 710 V 0.078 35 ATO-220FPSTP45N65M5TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeatures TAB2VDSS @ RDS(on) 3Order code ID1TJmax max32D2PAK1STB45N65M5TO-220FPTABSTF45N65M5710 V

STD45N10F7, STI45N10F7, STP45N10F7N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS ID PTOTmax.(1)13 STD45N10F7DPAK212 STI45N10F7 100 V 0.018 45 A 60 WI PAKTABSTP45N10F71. @ VGS = 10 V Ultra low on-resistance32

STP45NF06LSTB45NF06LN-CHANNEL 60V - 0.022 - 38ATO-220/ D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP45NF06L 60 V

STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP45N60DM6 600 V 0.099 30 A STW45N60DM6 33 Fast-recovery body diode 221 Lower R x area vs previous generation DS(on)1 Low gate charge, input capacitan

STP45N10STP45N10FIN - CHANNEL 100V - 0.027 - 45A - TO-220/TO-220FIPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP45N10 100 V

STP45NF3LL - STP45NF3LLFPSTB45NF3LLN-channel 30V - 0.014 - 45A TO-220 - TO-220FP - D2PAKSTripFET II power MOSFETGeneral featuresType VDSS RDS(on) ID33STB45NF3LL 30V

STP45NE06LSTP45NE06LFPN - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP45NE06L 60 V

GreenProductSTP45L01FaS mHop Microelectronics C orp.Ver1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.100V 40A 20 @ VGS=10VTO-220F Package.DGG D SSTF SERIESTO-220FS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Param

isc N-Channel MOSFET Transistor STP45N65M5FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 78m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP45NF06FEATURESTypical R (on)=0.022DSWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC &DC-CAconvertersAutomotive environmentABSOLUTE MAXIMUM RATING

Isc N-Channel MOSFET Transistor STP45N10F7FEATURESStatic drain-source on-resistance:RDS(on)18m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20