JFFC13N65D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JFFC13N65D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO220F

  📄📄 Copiar 

 Búsqueda de reemplazo de JFFC13N65D MOSFET

- Selecciónⓘ de transistores por parámetros

 

JFFC13N65D datasheet

 ..1. Size:827K  jiaensemi
 jffc13n65d.pdf pdf_icon

JFFC13N65D

JFFC13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.1. Size:923K  jiaensemi
 jfpc13n65c jffc13n65c.pdf pdf_icon

JFFC13N65D

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 9.1. Size:822K  jiaensemi
 jffc10n65d.pdf pdf_icon

JFFC13N65D

JFFC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.2. Size:845K  jiaensemi
 jfpc10n65c jffc10n65c.pdf pdf_icon

JFFC13N65D

JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

MOSTRAR MÁS

Otros transistores... JFAM20N65E, JFAM24N50C, JFAM25N50E, JFAM30N50E, JFAM30N60E, JFAM50N50C, JFAM7N90C, JFFC10N65D, NCEP15T14, JFFC20N65C, JFFC7N65E, JFFC8N65C, JFFM13N50E, JFFM13N65D, JFFM20N60C, JFFM3N120E, JFFM3N150C