JFFM13N50E Datasheet. Equivalente

 ..1. Size:995K  jiaensemi
 jffm13n50e.pdf

JFFM13N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.1. Size:692K  jiaensemi
 jfpc13n50c jffm13n50c.pdf

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 7.1. Size:827K  jiaensemi
 jffm13n65d.pdf

JFFM13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.1. Size:889K  jiaensemi
 jfpc18n50c jffm18n50c.pdf

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 9.2. Size:843K  jiaensemi
 jfpc10n60c jffm10n60c.pdf

JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 9.3. Size:908K  jiaensemi
 jfpc16n50c jffm16n50c.pdf

JFPC16N50C JFFM16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 16A, 500V, RDS(on)typ. = 0.33 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 9.4. Size:525K  jiaensemi
 jfpc2n80c jffm12n80c.pdf

JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S

 9.5. Size:844K  jiaensemi
 jfpc11n50c jffm11n50c.pdf

JFPC11N50C JFFM11N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 11A, 500V, RDS(on)typ. = 0.46 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 9.6. Size:862K  jiaensemi
 jfpc18n60c jffm18n60c.pdf

JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 9.7. Size:518K  jiaensemi
 jfpc10n80c jffm10n80c.pdf

JFPC10N80C JFFM10N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER

 9.8. Size:918K  jiaensemi
 jfpc12n60c jffm12n60c.pdf

JFPC12N60C JFFM12N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 12A, 600V, RDS(on)typ. = 0.52 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan